gmf05mc document number 85855 rev. 1.1, 29-apr-05 vishay semiconductors www.vishay.com 1 1 8 53 8 -4 vy - v = vishay y = year, is v aria b le for digit from 0 to 9 (e.g. 4 = 2004, 5 = 2005) cw = calendar week, is v aria b le for n u m b er from 01 to 52 gm3 = code for gmf05mc cw vy gm3 1 1 2 3 6 5 4 low capacitance esd protection diode array features ? transient protection for data lines as per iec 61000 - 4 - 2 (esd) 15 kv (air), 8 kv (contact), iec 61000 - 4 - 5 (lightning) 7 a (tp = 8/20 s) ? small package for use in portable electronics ? bidirectional protection of 4 i/o lines ? unidirectional protection of 5 i/o lines ? low leakage current ? ideal for cellular handsets, cordless phones, note- books, handhelds and digital cameras ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and w eee 2002/96/ec mechanical data case: sot-363 plastic case molding compound flammability rating: ul 94 v -0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: approx. 6.0 mg parts table absolute maximum ratings ratings at 25 c, ambient temperature unless otherwise specified thermal characteristics ratings at 25 c, ambient temperature unless otherwise specified part ordering code marking remarks gmf05mc GMF05MC-GS08 gm3 tape and reel parameter test condition symbol v alue unit peak pulse power 8/20 s waveform p ppm 100 w peak pulse current 8/20 s waveform i pp 7a parameter test condition symbol v alue unit operating temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c e3
www.vishay.com 2 document number 85855 rev. 1.1, 29-apr-05 gmf05mc vishay semiconductors electrical characteristics ratings at 25 c, ambient temper ature unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit reverse stand-off voltage v r w m 5 v reverse breakdown voltage i t = 1 ma v br 6 v reverse leakage current v r w m = 5 v i r 0.2 a clamping voltage i pp = 1 a, 8/20 s waveform v c 9 v i pp = 7 a, 8/20 s waveform v c 12 v peak forward voltage i f = 1 a, 8/20 s waveform v f 1.5 v junction capacitance between i/ o pins and gnd v r = 0 v , f = 1 mhz c j 75 pf figure 1. pulse derating curve figure 2. pulse w aveform 0 25 50 75 100 075 25 50 100 125 150 175 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a - ambient temperature ( c) 18687 i ppm -pe a k pulse current, % i rsm pulse width (td) is defined a s the point where the pe a k current dec a ys to 50 % of i ppm t - time ( s) t d = i pp 2 0 8 0 90 6 0 70 40 50 20 10 30 100 110 15 20 52530 10 0 1 8688 g a g aaaa v oltage 0.01 0.1 1 10 100 0.1 1 10 100 1000 1 8668 ppm p-pe a k pulse power ( kw ) t d - pulse dur a tion ( a) 0 10 20 30 40 50 6 0 70 8 0 90 100 012345 6 1 866 9 v r - reverse volt ag e(v) c - diode c a p a cit a nce(pf) d f=1mhz
gmf05mc document number 85855 rev. 1.1, 29-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. typical reverse v oltage vs. reverse current 0 1 2 3 4 5 6 7 0.01 0.1 1 10 100 1000 v - reverse volt ag e(v) i r - reverse current ( a) 1 86 70 r figure 6.typicalclamping v oltage vs. peak pulse current 0 2 4 6 8 10 12 14 012345 6 7 8 910 1 86 71 i pp -pe a k pulse curren t(a) v - typic a lcl a mpin g volt ag e(v) c 1.60 (0.063) 1.30 (0.052) ref. 0.65 (0.026) ref. 0.35 (0.014) 0.90 (0.035) 142 8 0 0. 8 0 (0.031) 1.00 (0.039) 10 0.10 (0.004) 0.10 (0.004) 0.25 (0.010) 1. 8 0 (0.071) 2.20 (0.0 8 7) 2.00 (0.079) 2.20 (0.0 8 7) 1.15 (0.045) 1.35 (0.053) 0.20 (0.009) 0.30 (0.012) 0.65 (0.026) 1.3 (0.052) i s o m e t h o d e mountin g pad layout
www.vishay.com 4 document number 85855 rev. 1.1, 29-apr-05 gmf05mc vishay semiconductors ozone depleting substances policy statement it is the policy of v ishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. v arious national and international initiatives are pressing for an earlier ban on these substances. v ishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. v ishay semiconductor gmbh can certify that our semic onductors are not manufactured with ozone depleting substances and do not co ntain such substances. w e reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use v ishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify v ishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. v ishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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